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Structural Properties of Phase-Change InSbTe Thin Films Grown at a Low Temperature by Metalorganic Chemical Vapor Deposition

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The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 °C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 °C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 °C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.
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Keywords: INSBTE CHALCOGENIDE MATERIALS; MOCVD; MULTI LEVEL MEMORY; PRAM; TRENCH

Document Type: Research Article

Publication date: 2011-01-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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