Nonvolatile Floating-Gate Memories Using Zr and ZrO₂ Nanodots

Authors: Hong, Seung Hui; Kim, Min Choul; Oh, Hyoung Taek; Choi, Suk-Ho; Kim, Kyung Joong

Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 1, January 2011 , pp. 148-151(4)

Publisher: American Scientific Publishers

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Abstract:

Triple-layer structures of SiO₂/Zr nanodots (NDs)/SiO₂ for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO₂ layers by IBSD are changed into ZrO₂ NDs by annealing. The memory window that is estimated by capacitance-voltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO₂ and ZrO₂.

Keywords: ZR NANODOTS; NONVOLATILE MEMORIES; DOUBLE OXIDE BARRIER

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2011.3136

Publication date: 2011-01-01

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Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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