Nonvolatile Floating-Gate Memories Using Zr and ZrO2 Nanodots
Authors: Hong, Seung Hui; Kim, Min Choul; Oh, Hyoung Taek; Choi, Suk-Ho; Kim, Kyung Joong
Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 1, January 2011 , pp. 148-151(4)
Publisher: American Scientific Publishers
Abstract:Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs by annealing. The memory window that is estimated by capacitance–voltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO2 and ZrO2.
Document Type: Research Article
Publication date: 2011-01-01
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