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Electrical Bistabilities and Memory Mechanisms of Organic Bistable Devices Fabricated Utilizing SnO2 Nanoparticles Embedded in a Poly(methyl methacrylate) Layer

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Abstract:

Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (IV) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles. Current-time (It) results showed the memory retention characteristic of the device. Carrier transport mechanisms of the device are described on the basis of the IV experimental results and electronic structures.

Keywords: CARRIER TRANSPORT MECHANISMS; CURRENT BISTABILITY; ORGANIC BISTABLE DEVICES; POLY(METHYL METHACRYLATE); SNO2 NANOPARTICLE

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2010.2813

Publication date: 2010-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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