The Application of Hartree Approximation in Exciton Recombination Energy for Conical InAs/GaAs Quantum Dots
Authors: Yao, Wenjie; Yu, Zhongyuan; Liu, Yumin; Jia, Boyong
Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 11, November 2010 , pp. 7612-7615(4)
Publisher: American Scientific Publishers
Abstract:Under the framework of the Hartree approximation, the ground state exciton binding energy and the interband transition energy are calculated by solving the coupled Schrodinger equations taking into account the coulomb interaction. The self-consistent effective confining potentials are obtained using a fast three-dimensional Fourier transform in every step of the reduced Schrodinger equations. The exciton binding energy increases at first, and then goes through the process of the decline with the increment of the size of conical InAs/GaAs quantum dot. The ground-state exciton oscillator strength becomes larger when the size of the quantum dots increases. It indicates that the radiative lifetime of the exciton will become shorter. The temperature will affect the interband transition energy, but the exciton binding energy is almost temperature-independent.
Document Type: Research Article
Publication date: November 2010
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