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The Application of Hartree Approximation in Exciton Recombination Energy for Conical InAs/GaAs Quantum Dots

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Abstract:

Under the framework of the Hartree approximation, the ground state exciton binding energy and the interband transition energy are calculated by solving the coupled Schrodinger equations taking into account the coulomb interaction. The self-consistent effective confining potentials are obtained using a fast three-dimensional Fourier transform in every step of the reduced Schrodinger equations. The exciton binding energy increases at first, and then goes through the process of the decline with the increment of the size of conical InAs/GaAs quantum dot. The ground-state exciton oscillator strength becomes larger when the size of the quantum dots increases. It indicates that the radiative lifetime of the exciton will become shorter. The temperature will affect the interband transition energy, but the exciton binding energy is almost temperature-independent.

Keywords: COULOMB INTERACTION; EXCITON BINDING ENERGY; HARTREE APPROXIMATION; OSCILLATOR STRENGTH

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.2924

Publication date: November 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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