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The Tunable Amorphous-Crystalline Transition Temperature by Indium-Doping on GeTe Thin Films

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Amorphous germanium telluride (GeTe) thin films were fabricated on SiO2/Si subtracts by RF sputtering at room temperature. The thickness of the as-deposited films is about 200 nm. Indium-doping on GeTe thin films were prepared by solution doping method. The GeTe thin films were dipped into InCl3 solution with 1 mol/L, 0.8 mol/L, 0.5 mol/L and 0.1 mol/L for an hour at 100 °C, respectively. Then the thin films were annealed at 200 °C for 10 min. The IT measurements show that the amorphous-crystalline transition temperature of In-GeTe films is lower than that of the undoped thin films. XRD reveals the formation of rock salt structure after annealing at 280 °C. XPS indicates that In–Te bond which may correspond to In2Te3 exists in the doped thin film. The results of calculating density of states (DOS) show that the changes of electronic states are mainly located around Fermi energy level with the increasing Indium content. These results indicate that the transition temperature of GeTe films can be effectively tuned by solution process doping indium, which may be useful to decrease set current.
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Document Type: Research Article

Publication date: 01 November 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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