Silicon Micro/Nanofabrication Using Metastable Helium Atom Beam Lithography

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We utilize metastable helium (He*) atom beam lithography to pattern silicon substrates by using self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS) grown directly on silicon surface as resist. An improved wet-chemical etching method was used to transfer the resist pattern into silicon substrate. Negative and positive pattern formations with well-defined edges were observed for silicon(100) substrate with SAM after exposure to the He* atom beam followed by the etching. Results indicate a clear transition from positive to negative patterns relies on the He* dosage. The pattern sizes on silicon were successfully decreased to the order of 100 nm, even less than 50 nm.


Document Type: Research Article


Publication date: November 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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