Provider: Ingenta Connect
Database: Ingenta Connect
Content: application/x-research-info-systems
TY - ABST
AU - Bai, Anqi
AU - Cheng, Buwen
AU - Wang, Xiaofeng
AU - Xue, Chunlai
AU - Zuo, Yuhua
AU - Wang, Qiming
TI - Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation
JO - Journal of Nanoscience and Nanotechnology
PY - 2010-11-01T00:00:00///
VL - 10
IS - 11
SP - 7428
EP - 7431
KW - PAA
KW - ELECTROLESS DEPOSITION
KW - SEM
KW - I-V
KW - NANOELECTRODE ARRAYS
N2 - A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100∼200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni–W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni–W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni–W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current–voltage (I–V) curves revealed the contact properties. After annealing in N2 at 700 °C, good linear property was shown with contact resistance of 33 Ω, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.
UR - https://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000011/art00100
M3 - doi:10.1166/jnn.2010.2845
UR - https://doi.org/10.1166/jnn.2010.2845
ER -