Realization of Vertical Silicon Nanowire Networks with an Ultra High Density Using a Top-Down Approach
Authors: Han, Xiang-Lei; Larrieu, Guilhem; Dubois, Emmanuel
Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 11, November 2010 , pp. 7423-7427(5)
Publisher: American Scientific Publishers
Abstract:In this paper, we demonstrate the top-down fabrication of vertical silicon nanowires networks with an ultra high density (4 × 1010 cm−2), a yield of 100%, and a precise control of both diameter and location. Firstly, dense and well-defined networks of nanopillars have been patterned by e-beam lithography using a negative tone e-beam resist Hydrogen SylsesQuioxane (HSQ). A very high contrast has been obtained using a high acceleration voltage (100 kV), very small beam size at a current of 100 pA and a concentrated developer, 25% Tetramethylammonium Hydroxide. The patterns were transferred by reactive ion etching. Using chlorine based plasma chemistry and low pressure, etching anisotropy was guaranteed while avoiding the so-called 'grass effect'. This approach enabled the production of vertical silicon nanowires networks with a 20 nm diameter and a pitch of 30 nm. Lastly, the self-limited oxidation phenomenon in 1D structure has been used to perfectly control the shrinking of NWs and to obtain a Si surface free of defects induced by reactive ion etching. The silicon nanowires networks have been tapered by wet oxidation (850 °C) down to a diameter of 10 nm with a high aspect ratio 11.
Document Type: Research article
Publication date: 2010-11-01
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