Preparation of Rhombus-Shaped Micro/Nanofluidic Channels with Dimensions Ranging from Hundred Nanometers to Several Micrometers
Abstract:Nanofluidic devices are of great interest due to their promising applications in biological/chemical detection and miniaturized power supplies. A rhombus-shaped channel with nanometer-sized opening is of particular interest as it can induce versatile symmetry-breaking phenomena such as current gating and rectification, hysteresis, biomolecule stretching etc. However, existing nanofabrication techniques, such as electron beam lithography, are usually costly and time-consuming as the target pattern has a spectrum of characteristic dimensions varying from nanometers to micrometers. In this work, a rhombus-shaped micro/nanofluidic channel with lateral dimension as small as a few hundred nanometers was prepared by depositing SiO2 into a pre-etched microchannel. The low pressure chemical vapor deposition (LPCVD) guaranteed excellent step coverage during the deposition and a 2.1 m-thick SiO2 filling shrank the original micrometer-sized opening down to 150 nm. By this etching-filling process, fluidic devices with feature size ranging from hundred nanometers to several micrometers can be fabricated as a single monolith, thereby facilitating the fabrication of composite micro/nanofluidics systems.
Document Type: Research Article
Publication date: November 1, 2010
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- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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