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Photoluminescence Study of Type-II InGaPN/GaAs Quantum Wells

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Abstract:

Nearly lattice-matched In0.528Ga0.472P1−yNy bulk layer and In0.528Ga0.472P1−yNy/GaAs and GaAs/In0.528Ga0.472P1−yNy quantum wells with higher N content, y = 0.027, were grown on GaAs(001) substrates by metalorganic vapor phase epitaxy. High-resolution X-ray diffraction results demonstrated the high quality of both the layer and quantum wells with fairly flat interfaces. Temperature dependent photoluminescence results showed that a near-band-edge emission is dominant in the bulk In0.528Ga0.472P0.973N0.027 layer, which at low temperature (T < 100 K) is associated with localized emissions centered at ∼1.73 eV. Bandgap of In0.528Ga0.472P0.973N0.027 was examined to be 1.81 and 1.78 eV at 10 K and room-temperature, respectively. Low temperature (10 K)-photoluminescence spectrum obtained from the GaAs/InxGa1−xP1−yNy quantum well also exhibited red emission at 1.73 eV attributed to the emission from the InGaPN barrier. In addition, there are the extra weak peaks appear in a near-infrared energy range at 1.357 and 1.351 eV for InxGa1−xP1−yNy/GaAs and GaAs/InxGa1−xP1−yNy quantum wells, respectively. Such optical transitions are considered as an indirect transition between electrons located in the InGaPN and holes located in the GaAs regions. This situation suggested that both the In0.528Ga0.472P0.973N0.027/GaAs and GaAs/In0.528Ga0.472P0.973N0.027 quantum wells exhibits a type-II quantum structure. This interpretation is justified when the valence and conduction band offsets of the type-II band alignment, which are relatively approximated to be 450 and 160 meV, are properly taken into account.

Keywords: INGAPN; MOVPE; PHOTOLUMINESCENCE; QUANTUM WELL; TYPE-II; VALENCE BAND OFFSET

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.2879

Publication date: November 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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