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A New Chemically Amplified Resist for High Resolution Patterning by E-Beam Lithography

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In this work, we have undertaken evaluation of the lithography property of a recently available chemically amplified resist (CAR) resist, UV1116 supplied by Rohm and Haas Company. Systematic study of the EBL property such as sensitivity, contrast, high resolution limit and dense capability, as well as resistance to plasma dry etching has been carried out. In comparison with the performance of UVIII, we conclude that the UV1116 can be a good alternative with better lithography quality.


Document Type: Research Article


Publication date: 2010-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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