Low-Consumption Phase Change Material with Good Data Retention Selected from Sb_xTe

Authors: Gu, Yifeng; Zhang, Ting; Song, Zhitang; Liu, Bo; Feng, Songlin

Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 11, November 2010 , pp. 7040-7044(5)

Publisher: American Scientific Publishers

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Abstract:

Various compositions of Sb_xTe phase-change films have been investigated by means of in situ temperature-dependent resistance measurement. Although crystallization temperature of Sb₃Te is about 536 K, a little lower than those of Sb₂Te and Sb₄Te, it has a better data retention performance than the other two compositions. X-ray diffraction patterns imply that poly-crystalline structures of Sb-Te alloys are all hexagonal, and phase separation appears in SbTe₃, Sb₂Te, Sb₃Te and Sb₄Te alloys. Sb₂Te and Sb₃Te have been selected for phase-change random access memory devices. RESET voltage for Sb₃Te is 1.2 V when the voltage pulse width is 50 ns, 0.3 V lower than that for Sb₂Te. By using the voltage pulse width of 200 ns, Sb₃Te needs 1.8 V and 4 V to complete SET-RESET performance, 0.4 V and 0.5 V lower than Sb₂Te respectively. It indicates that Sb₃Te is more suitable for the application of phase-change random access memory.

Keywords: SBX TE; PHASE-CHANGE RANDOM ACCESS MEMORY; PHASE-CHANGE SPEED; DATA RETENTION; POWER CONSUMPTION

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2010.2808

Publication date: 2010-11-01

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