Magnetic Properties of Al–SiC Co-Sputtered Films Grown by Radio Frequency Sputtering

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Room-temperature ferromagnetism was observed in the Al–SiC co-sputtered films fabricated by radio frequency (RF) sputtering. When the annealing temperature (Ta) was increased from 800 to 1100 °C, the ferromagnetic ordering was present with the formation of Al–C bonds. Both annealing and Al-doped the films can improve the crystallization of SiC and induce long-range magnetic order in the Al–SiC co-sputtered films. Experiments show that the Al solubility was less than 0.8 at% in SiC matrix. As a possible explanation for the existence of local magnetic moment in Al-doped SiC, unpaired spins arise in a conversion from sp3 to the sp3/sp2 hybridization. The partial Si–C bonds in SiC were converted to Al–C bonds when the trivalent aluminum entered into Si sites. Al atoms introduce some net spins in Al doped film with the calculated integrated spin density 0.467 B. The structural defects produced by Al-doping have provided an exciting possibility of nonmagnetic atoms-doped to control the spin moments and induce ferromagnetism in wide-gap semiconductor.


Document Type: Research Article


Publication date: November 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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