We have successfully grown non-tapered InN nanorods on Si substrate using an RF plasma assisted metalorganic chemical vapor deposition technique. Employment of 50 W nitrogen plasma reduces the optimal growth temperature to 500 °C. In order to study the temperature dependent bandgap and thermal quenching mechanism in relation to the localized states, photoluminescence measurement over a temperature range from 7 to 160 K are conducted. The photoluminescence at 7 K shows a strong near-band-emission energy of 0.682 eV with a narrow band width of 0.027 eV, which reveals excellent optical and structural qualities of the InN nanorods.
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