Photoluminescence Properties of Non-Tapered InN Nanorods Grown by Plasma-Assisted Metalorganic Chemical Vapor Phase Deposition

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Abstract:

We have successfully grown non-tapered InN nanorods on Si substrate using an RF plasma assisted metalorganic chemical vapor deposition technique. Employment of 50 W nitrogen plasma reduces the optimal growth temperature to 500 °C. In order to study the temperature dependent bandgap and thermal quenching mechanism in relation to the localized states, photoluminescence measurement over a temperature range from 7 to 160 K are conducted. The photoluminescence at 7 K shows a strong near-band-emission energy of 0.682 eV with a narrow band width of 0.027 eV, which reveals excellent optical and structural qualities of the InN nanorods.

Keywords: INN; MOCVD; NANORODS; NANOWIRES; PA-MOCVD; PHOTOLUMINESCENCE

Document Type: Short Communication

DOI: http://dx.doi.org/10.1166/jnn.2010.2995

Publication date: October 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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