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Electrical Characterization of Composition Modulated In1−x Sb x Nanowire Field Effect Transistors by Scanning Gate Microscopy

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In this work high quality crystalline In1−x Sb x nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In1−x Sb x (x∼0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In1−x Sb x nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the I dsV ds characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In1−x Sb x NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.
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Keywords: FET; NANOWIRE; SEMICONDUCTOR; SGM

Document Type: Short Communication

Publication date: 2010-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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