Electrical Characterization of Composition Modulated In1−xSbx Nanowire Field Effect Transistors by Scanning Gate Microscopy
Authors: Martinez-Morales, A. A.; Penchev, M.; Zhong, J.; Jing, X.; Singh, K. V.; Yengel, E.; Khan, M. I.; Ozkan, C. S.; Ozkan, M.
Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 10, October 2010 , pp. 6779-6782(4)
Publisher: American Scientific Publishers
Abstract:In this work high quality crystalline In1−xSbx nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In1−xSbx (x∼0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In1−xSbx nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the Ids–Vds characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In1−xSbx NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.
Document Type: Short Communication
Publication date: October 1, 2010
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