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Growth and Properties of Aligned ZnO Nanowires and Their Applications to n-ZnO/p-Si Heterojunction Diodes

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Aligned n-ZnO nanowires were synthesized via simple thermal evaporation process by using metallic zinc powder in the presence of oxygen on p-silicon (Si) substrate. The as-synthesized aligned ZnO nanowires were characterized in terms of their structural and optical properties by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction process (XRD) and room-temperature photoluminescence (PL) properties. The detailed structural and optical studies revealed that the as-grown nanowires are single crystalline with the wurtzite hexagonal phase and exhibit good optical properties. From application point of view, the as-grown aligned n-ZnO nanowires on p-Si substrates were used to fabricate heterojunction diodes. The fabricated heterojunction diodes exhibited good electrical (IV) properties with the turn-on voltage of ∼1.0 V. A temperature-dependant (from 25 °C ∼130 °C), IV characteristics for the fabricated device was also demonstrated in this paper. The presented results demonstrate that the simply grown aligned n-ZnO nanowires on p-Si substrate can be efficiently used for the fabrication of efficient heterojunction devices.
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Document Type: Research Article

Publication date: 01 October 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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