Electron Beam Annealing of Fe+ Implanted Si Nanostructures
Silicon nanostructures (nanowhiskers) have been formed at surface densities ∼109 cm−2 by electron beam annealing (EBA) prior to the implantation of 7 keV Fe+ ions to fluences from 1 × 1013–4 × 1015 Fe+ cm−2. A second EBA step is then applied to relieve implantation-induced stresses. RBS analysis shows that the implanted Fe remains close to the surface. AFM characterisations of the implanted nanowhiskers before and after the final EBA step are summarised in graphs of height versus surface density. In a striking result it is shown that the nanowhiskers not only survive processing but also grow significantly. For example, at the highest fluence of 4 × 1015 Fe+ cm−2, the average height more than doubles: the increases are from 5.0 nm to 6.5 nm under implantation and from 6.5 nm to 11.8 nm under EBA. In addition there is a significant increase in surface density from an initial value of 1.6 × 109 cm−2 to 4.3 × 109 cm−2. These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission.
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Document Type: Research Article
Publication date: 2010-10-01
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