Ultralow-Power Complementary Metal-Oxide-Semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors

Authors: Ma, R.M.; Peng, R.M.; Wen, X.N.; Dai, L.; Liu, C.; Sun, T.; Xu, W.J.; Qin, G.G.

Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 10, October 2010 , pp. 6428-6431(4)

Publisher: American Scientific Publishers

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Abstract:

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Keywords: INTEGRATED CIRCUIT; FIELD-EFFECT-TRANSISTORS; SCHOTTKY BARRIER; NANOWIRES; DOPING

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2010.2541

Publication date: 2010-10-01

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