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Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth

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In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. After 1000 h life test (55 °C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 μm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
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Keywords: GAN; LIGHT EMITTING DIODES (LEDS); NANO-IMPRINT LITHOGRAPHY (NIL); PHOTONIC QUASI-CRYSTAL (PQC)

Document Type: Research Article

Publication date: 2010-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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