Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. After 1000 h life test (55 °C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 μm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
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Document Type: Research Article
Publication date: 2010-10-01
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