A Two-Terminal Write-Once-Read-Many-Times-Memory Device Based on an Aluminum Nitride Thin Film Containing Al Nanocrystals
Abstract:A switching from a high-conduction state to a low-conduction state occurs in an AlN thin film containing Al nanocrystals (nc-Al) when the nc-Al is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-Al as a result of the charging of the nc-Al. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-Al with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 × 106 read cycles, and its retention time is predicted to be more than 10 years.
Document Type: Research Article
Publication date: 2010-09-01
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