@article {Jo:2010:1533-4880:3595,
title = "Roll-Printed Organic Thin-Film Transistor Using Patterned Poly(dimethylsiloxane) (PDMS) Stamp",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2010",
volume = "10",
number = "5",
publication date ="2010-05-01T00:00:00",
pages = "3595-3599",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000005/art00123",
doi = "doi:10.1166/jnn.2010.2255",
keyword = "AG PASTE, PRINTED OTFT, ORGANIC THIN-FILM TRANSISTORS, PDMS STAMP, ROLL PRINTING",
author = "Jo, Jeongdai and Yu, Jong-Su and Lee, Taik-Min and Kim, Dong-Soo and Kim, Kwang-Young",
abstract = "The roll-printed gate, source, and drain electrodes of organic thin-film transistors (OTFTs) were fabricated by gravure printing or gravure-offset printing using patterned poly(dimethylsiloxane) (PDMS) stamp with various channel lengths and low-resistance silver (Ag) pastes on flexible 150 \texttimes 150 mm2 plastic substrates. Bottom-contact roll-printed OTFTs used polyvinylphenol (PVP) as polymeric dielectric and bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) as organic semiconductor; they were formed by spin coating or ink-jetting. Depending on the choice of roll-printing method, the printed OTFTs obtained had a field-effect mobility of between 0.08 and 0.1 cm2/Vs, an on/off current ratio of between 104 and 105, and a subthreshold slope of between 1.96 and 2.32 V/decade. The roll-printing using patterned PDMS stamp and soluble processes made it possible to fabricate a printed OTFT with a channel length of between 12 to 74 m on a plastic substrate; this was not previously possible using traditional printing techniques. The proposed fabrication process was 20 steps shorted than conventional fabrication techniques.",
}