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Effect of Deposition Temperature on the Characteristics of HfNx Thin Films Prepared by Plasma Assisted Cyclic Chemical Vapor Deposition

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This study examined the resistivity, composition and crystallinity of chemically-vapor-deposited HfNx films deposited using tetrakis(dimethylamido)hafnium and plasma activated hydrogen as a function of the deposition temperature. The film growth rate (thickness/cycle) ranged from 0.09–0.15 nm/cycle depending on the deposition temperature. The deposition rate was initially insensitive to the substrate temperature at 150–200 °C but increased significantly at higher temperatures. The carbon impurities in the films were in the range of ∼17 to 18 at% and formed Hf–C bonds. All the deposited films were polycrystalline, regardless of the deposition conditions, with a (111) preferred orientation. High substrate temperatures tended to yield films with low resistivity that was relatively constant at temperatures above 225 °C.
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Keywords: CVD; HFC; HFN; PLASMA; RESISTIVITY

Document Type: Research Article

Publication date: 2010-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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