Effect of Deposition Temperature on the Characteristics of HfNx Thin Films Prepared by Plasma Assisted Cyclic Chemical Vapor Deposition
This study examined the resistivity, composition and crystallinity of chemically-vapor-deposited HfNx films deposited using tetrakis(dimethylamido)hafnium and plasma activated hydrogen as a function of the deposition temperature. The film growth rate (thickness/cycle) ranged from 0.09–0.15 nm/cycle depending on the deposition temperature. The deposition rate was initially insensitive to the substrate temperature at 150–200 °C but increased significantly at higher temperatures. The carbon impurities in the films were in the range of ∼17 to 18 at% and formed Hf–C bonds. All the deposited films were polycrystalline, regardless of the deposition conditions, with a (111) preferred orientation. High substrate temperatures tended to yield films with low resistivity that was relatively constant at temperatures above 225 °C.
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Document Type: Research Article
Publication date: 2010-05-01
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