Temperature Dependent Electrical Properties of Organic Light-Emitting Diodes Using a Zn Complex
We synthesized a new electroluminescent material [(1,10-phenanthroline)(8-hydroxyqu inoline)] Zn(phen)q. The temperature dependence of the electrical properties of OLED using Zn(phen)q are studied to understand the electrical conduction mechanism. The current density–voltage characteristics are measured in the temperature range of 60∼240 K and analyzed using a hopping model with an exponential trap distribution. At temperatures above 150 K, hopping conduction with an exponential trap distribution is dominant. We have obtained a characteristic trap depth of Et = 0.13 eV.
Keywords: CHARACTERISTIC TRAP DEPTH; ELECTRON TRANSPORTING LAYER; EXPONENTIAL TRAP DISTRIBUTION; HOPPING; ZN(PHEN)Q
Document Type: Research Article
Publication date: 01 May 2010
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