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Temperature Dependent Electrical Properties of Organic Light-Emitting Diodes Using a Zn Complex

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We synthesized a new electroluminescent material [(1,10-phenanthroline)(8-hydroxyqu inoline)] Zn(phen)q. The temperature dependence of the electrical properties of OLED using Zn(phen)q are studied to understand the electrical conduction mechanism. The current density–voltage characteristics are measured in the temperature range of 60∼240 K and analyzed using a hopping model with an exponential trap distribution. At temperatures above 150 K, hopping conduction with an exponential trap distribution is dominant. We have obtained a characteristic trap depth of Et = 0.13 eV.
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Keywords: CHARACTERISTIC TRAP DEPTH; ELECTRON TRANSPORTING LAYER; EXPONENTIAL TRAP DISTRIBUTION; HOPPING; ZN(PHEN)Q

Document Type: Research Article

Publication date: 2010-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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