Interfacial Reactions of Nano-Structured Cu-Doped Indium Oxide/Indium Tin Oxide Ohmic Contacts to p-GaN
Abstract:Interfacial microstructure and elemental diffusion of Cu-doped indium oxide (CIO)/indium tin oxide (ITO) ohmic contacts to p-type GaN for light-emitting diodes (LEDs) were investigated using cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction. The CIO/ITO contacts gave specific contact resistances of ∼10−4 Ωcm2 and transmittance greater than 95% at a wavelength of 405 nm when annealed at 630 °C for 1 min in air. After annealing at 630 °C, multi-component oxides composed of Ga2O3-In2O3, Ga2O3-CuO, and In2O3-CuO formed at the interface between p-GaN and ITO. Formation of multi-component oxides reduced the barrier height between p-GaN and ITO due to their higher work functions than that of ITO, and caused Ga in the GaN to diffuse into the CIO/ITO layer, followed by generation of acceptor-like Ga vacancies near the GaN surface, which lowered contact resistivity of the CIO/ITO contacts to p-GaN after the annealing.
Document Type: Research Article
Publication date: May 1, 2010
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