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Prediction of TiO2 Thin Film Growth on the Glass Beads in a Rotating Plasma Chemical Vapor Deposition Reactor

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We calculated the concentration profiles of important chemical species for TiO2 thin film growth on the glass beads in the TTIP+O2 plasmas and compared the predicted growth rates of thin films with the experimental measurements. The film thickness profile depends on the concentration profile of TiO(OC3H7)3 precursors in the gas phase because TiO(OC3H7)3 is the main precursor of the thin film. The TTIP concentration decreases with time, while the TiO(OC3H7)3 concentration increases, and they reach the steady state about 2∼3 sec. The growth rate of TiO2 film predicted in this study was 9.2 nm/min and is in good agreements with the experimental result of 10.5 nm/min under the same process conditions. This study suggests that a uniform TiO2 thin film on particles can be obtained by using a rotating cylindrical PCVD reactor.


Document Type: Research Article


Publication date: 2010-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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