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Coherent Transport in High Performance Double Magnetic Junctions

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Spin-dependent transport is considered in double magnetic tunnel junctions of two types F-I-F-I-F and F-I-N-I-F with thin insulating (I) barriers between the ferromagnetic (F) or non-magnetic (N) electrodes. Using the Landauer formalism within single-band tight-binding dynamics for atomically perfect epitaxial multilayers, the dependencies of tunnel magnetoresistance (TMR) on the on-site atomic energies ε I or ε N and number n I of atomic planes in the respective layers are obtained. It is found that the maximum TMR corresponds to the "shallow band" regime with respect to εN and a series of peaks appears with respect to n I, essentially enhancing the performance of a simple F-I-F junction. These results suggest the material and structural choices for optimum TMR devices of advanced compositions.
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Document Type: Research Article

Publication date: 01 April 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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