Influence of Pinholes on MgO-Tunnel Junction Barrier Parameters Obtained from Current–Voltage Characteristics
Authors: Ventura, J.; Teixeira, J. M.; Araujo, J. P.; Sousa, J. B.; Ferreira, R.; Freitas, P. P.; Langer, J.; Ocker, B.; Maass, W.
Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 4, April 2010 , pp. 2731-2734(4)
Publisher: American Scientific Publishers
Abstract:Magnetic tunnel junctions (MTJs) with thin barriers are already used as read sensors in recording media. However, the presence of pinholes across such few Å thick barriers cannot be excluded and one needs to investigate their effect on the MTJ-transport properties. By applying large electrical currents we could change the electrical resistance of the studied MgO MTJs (due to pinhole-size variations), and study how pinholes influence the barrier parameters (thickness t and height ) obtained by fitting current–voltage characteristics to Simmons' model. We found that, with decreasing resistance, the barrier thickness (height) decreases (increases). These results were well reproduced by a model of parallel-resistances, allowing us to estimate pinhole-free barrier parameters.
Document Type: Research Article
Publication date: 2010-04-01
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