Skip to main content

On the Role of Tin Doping in InO x Thin Films Deposited by Radio Frequency-Plasma Enhanced Reactive Thermal Evaporation

Buy Article:

$105.00 plus tax (Refund Policy)

In view of the increasing need for larger-area display devices with improved image quality it becomes increasingly important to decrease resistivity while maintaining transparency in transparent conducting oxides (TCOs). Accomplishing the goal of increased conductivity and transparency will require a deeper understanding of the relationships between the structure and the electro-optical properties of these materials. In this work we study the role of tin doping in InO x thin films. Undoped indium oxide (InO x ) and indium tin oxide (ITO) thin films were deposited at room temperature by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE), a new technique recently developed in our laboratory using as evaporation source either In rods or a 90%In:10%Sn alloy, respectively. The two most important macroscopic properties—optical transparency and electrical resistivity—seem to be independent of the tin content in these deposition conditions. Results show that the films present a visible transmittance of the order of 82%, and an electrical resistivity of about 8 × 10−4 Ω·cm. Surface morphology characterization made by atomic force microscopy (AFM) showed that homogeneity of the films deposited from a 90%In:10%Sn alloy is enhanced (a film with small and compact grains is produced) and consequently a smooth surface with reduced roughness and with similar grain size and shape is obtained. Films deposited from pure In rods evaporation source show the presence of aggregates randomly distributed above a film tissue formed of thinner grains.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: INDIUM TIN OXIDE (ITO); INOX; RF-PLASMA ENHANCED REACTIVE THERMAL EVAPORATION (RF-PERTE); ROOM TEMPERATURE

Document Type: Research Article

Publication date: 01 April 2010

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more