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Inelastic Coulomb Scatterings of Doped Armchair Carbon Nanotubes

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For doped armchair carbon nanotubes, the free electrons in the conduction bands would cause the intraband single-particle and collective excitations. Both kinds of excitations would be split into two modes because of two different Fermi-momentum states (k F's). The excited carriers might be deexcited through such Coulomb excitations. Regarding the case where the transferred momentum L = 0, the two single-particle and the lower-frequency collective excitation modes could be the efficient deexcitation channels. In the lowest bands, the decay rates of the electron states exhibit weak Fermi energy (E F) dependence, but the decay rates of the hole states become greater with the increase of E F except for the right-side k F. Concerning the states in the higher bands, the L ≠ 0 excitations also take part in the deexcitation processes. Both the electron and hole states have the same decay rates except for the case where the carriers decay to the lowest states. The decay rates contrast sharply with those of undoped carbon nanotubes and two-dimensional intercalated graphenes. It is domenated by the Fermi energy, the geometric structure and the dimensionalities. The femtosecond time-resolved photoelectron, transmission and fluorescence spectroscopies could be used to verify the predicted results.
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Document Type: Research Article

Publication date: 2010-04-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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