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Hybrid Vertical Architecture Transistor with 2,6-Diphenylindenofluorene Based Emitter and Base Permeability Controlled by Polystyrene Spheres Lithography

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We report on vertical architecture hybrid transistor devices using p-type silicon as collector terminal and 2,6-diphenylindenofluorene as organic semiconductor in the emitter layer. Polystyrene spheres were used as shadow masks in order to control the diameter and density of the openings in the Al metallic base. Two processes of sphere deposition were used: electrospray and dip-coating. The electrospray deposition leads to a smaller density of sphere agglomerates, but for the used sphere diameter, ∼200 nm, the transistor performance is similar for devices prepared with sphere deposition by both techniques. The so constructed permeable-base transistors show common-emitter current gain of the order of 102.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.1924

Publication date: April 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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