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A Large Quantity Synthesis of Ultra-Thin ZnO Nanobelts Induced from Stacking Faults

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Abstract:

Thin ZnO nanobelts with average width of 7.5 nm have been synthesized using vapor phase transport method. It was found that stacking faults directed the growth of the thin nanobelts along the 〈0110〉 direction with {2110} top/bottom surfaces and {0001} side surfaces. The {0002} stacking fault with translation of 1/3 0110 extends throughout entire length of the ZnO nanobelts. The growth steps at the {0110} growth fronts resulted from the {0002} stacking fault are believed to direct fast axial growth of the thin ZnO nanobelts. The thin ZnO nanobelts are expected to be promising candidates for highly sensitive chemical and biological sensor applications.

Keywords: NANOBELTS; STACKING FAULTS; ULTRATHIN; ZNO

Document Type: Short Communication

DOI: http://dx.doi.org/10.1166/jnn.2010.2128

Publication date: March 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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