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Enhanced Raman Scattering in Slow-Light Photonic Crystals for Chip-Scale Frequency Conversion and Optical Amplification

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We present measurements of enhanced Raman scattering in silicon slow-light photonic crystal waveguides. By utilizing both the Bragg gap edge dispersion of TM-like modes for pump enhancement and the TE-like fundamental mode onset for Stokes enhancement, a six-fold increase in the spontaneous Raman scattering was observed in the double slow-light regime. Both forward and backward Stokes signals are examined, with continuous-wave measurements, in our low-loss photonic crystal membranes. The measured nonlinear enhancement matches well with our numerical model and simulations, and are described in detail in this paper. These observations support the development of chip-scale frequency conversion and optical amplification in silicon nanophotonics.
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Document Type: Research Article

Publication date: 2010-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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