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Photoinduced Organic Field-Effect Transistor Based on Poly-3-Hexyl-Thiophene Active Layer

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Abstract:

Top-contact organic field-effect transistors (OFETs) were fabricated by using a poly-3-hexylthiophene (P3HT) active layer. The characteristics of OFETs without and with the light-illumination were investigated. The experimental results indicate that the light has a great influence on the OFETs properties. After the light-illumination, the drain current and carrier mobility were increased, the threshold was decreased, and the on/off ratio was enhanced.

Keywords: CARRIER MOBILITY; MONOCHROMATIC LIGHT; ORGANIC FIELD EFFECT TRANSISTOR; P3HT; THRESHOLD VOLTAGE

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.2108

Publication date: March 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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