Photoinduced Organic Field-Effect Transistor Based on Poly-3-Hexyl-Thiophene Active Layer
Top-contact organic field-effect transistors (OFETs) were fabricated by using a poly-3-hexylthiophene (P3HT) active layer. The characteristics of OFETs without and with the light-illumination were investigated. The experimental results indicate that the light has a great influence on the OFETs properties. After the light-illumination, the drain current and carrier mobility were increased, the threshold was decreased, and the on/off ratio was enhanced.
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Document Type: Research Article
Publication date: 2010-03-01
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