Authors: Sinha, Godhuli; Pal, Umapada; Zaldivar, M. Herrera; Patra, Amitava

Source: Journal of Nanoscience and Nanotechnology, Volume 10, Number 3, March 2010 , pp. 1982-1988(7)

Publisher: American Scientific Publishers

Abstract:

Here, we report the synthesis of uniform α-GaO(OH) nanorods on Si substrates at low temperature (200 °C) using solvothermal technique. α-GaO(OH) uniform nanorods is converted to β-Ga₂O₃ after annealing at 900 °C under ambient atmosphere. A series of electron microscopy characterizations including scanning electron microscopy (SEM), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) are used to understand the growth mechanism of α-GaO(OH) nanorods formation. This nanostructure emits defect-related strong PL emissions at blue (492 nm) and green (522 nm) regions and the relative intensities of these emissions peaks can be modified by varying the reaction conditions. Similarly, we also observed room temperature cathodoluminescence (CL) and the uniform CL contrast of the nanorods in their CL image indicates a homogeneous defect distribution along the nanorods.

Keywords: GAO(OH) NANORODS; SOLVOTHERMAL; GROWTH MECHANISM; CATHODOLUMINESCENCE

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2010.2095

Publication date: 2010-03-01

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