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Synthesis of α-GaO(OH) Nanorods and Their Optical Properties

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Here, we report the synthesis of uniform α-GaO(OH) nanorods on Si substrates at low temperature (200 °C) using solvothermal technique. α-GaO(OH) uniform nanorods is converted to -Ga2O3 after annealing at 900 °C under ambient atmosphere. A series of electron microscopy characterizations including scanning electron microscopy (SEM), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) are used to understand the growth mechanism of α-GaO(OH) nanorods formation. This nanostructure emits defect-related strong PL emissions at blue (492 nm) and green (522 nm) regions and the relative intensities of these emissions peaks can be modified by varying the reaction conditions. Similarly, we also observed room temperature cathodoluminescence (CL) and the uniform CL contrast of the nanorods in their CL image indicates a homogeneous defect distribution along the nanorods.


Document Type: Research Article


Publication date: 2010-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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