Synthesis and Optical Properties of Vertically Aligned ZnO Nanorods
ZnO nanorods were grown on an n-type silicon (111) substrate with the assistance of Au catalyst by chemical vapor deposition (CVD). The ZnO nanorods were about 200 nm diameter with uniform lengths of about 1.2 μm. The ZnO nanorods exhibited  orientation. ZnO nanorods grow in dense arrays perpendicular to the (111)-plane of silicon due to ZnO ‖ Si, ZnO ‖ Si, ZnO ‖ Si and ZnO ‖ Si epitaxy. Room-temperature photoluminescence (PL) measurements show three near band-edge emission peak at 377, 379, 389 nm. These peaks are attributed to exciton transitions. Analysis indicates that the band gap of ZnO nanorods is 3.301 eV and exciton binding energy is 0.114 eV.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
Document Type: Research Article
Publication date: 2010-03-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites