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Synthesis and Optical Properties of Vertically Aligned ZnO Nanorods

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ZnO nanorods were grown on an n-type silicon (111) substrate with the assistance of Au catalyst by chemical vapor deposition (CVD). The ZnO nanorods were about 200 nm diameter with uniform lengths of about 1.2 μm. The ZnO nanorods exhibited [0001] orientation. ZnO nanorods grow in dense arrays perpendicular to the (111)-plane of silicon due to [0001]ZnO ‖ [111]Si, [2110]ZnO ‖ [110]Si, [1210]ZnO ‖ [101]Si and [1120]ZnO ‖ [011]Si epitaxy. Room-temperature photoluminescence (PL) measurements show three near band-edge emission peak at 377, 379, 389 nm. These peaks are attributed to exciton transitions. Analysis indicates that the band gap of ZnO nanorods is 3.301 eV and exciton binding energy is 0.114 eV.
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Keywords: EPITAXIAL RELATIONS; EXCITON; PHOTOLUMINESCENCE; ZNO NANORODS

Document Type: Research Article

Publication date: 2010-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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