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Growth of Highly Oriented ZnO Nanowires on GaN Substrates for Electronic and Optical Sensor Applications

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Abstract:

In this Paper we present growth and characterization results of highly oriented ZnO nanowires grown on wide bandgap GaN substrates. Experimental results on the ZnO nanowires grown on p-GaN are presented with growth morphology and dimensionality control. We also present experimental results on these nanowire arrays such as IV measurements and UV sensitivity measurements. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.

Keywords: ELECTRONIC APPLICATIONS; HIGHLY ORIENTED ZNO GROWTH; NANOWIRES; P-N JUNCTIONS; UV IMAGING; ZNO

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.2110

Publication date: March 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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