Nearly Gaussian Dependence Between Near-Infrared Photoluminescence and O/Si Composition Ratio of Si-Rich SiO x Film with Buried Si Nanocrystals
O/Si composition ratio optimized near-infrared (NIR) photoluminescence (PL) from Si nanocrystal (nc-Si) precipitated in Si-rich SiO x grown by Ar-diluted SiH4 and N2O is demonstrated. By detuning N2O fluence and N2O/SiH4 ratio to adjust the O/Si composition ratio of SiO x from 1.38 to 0.88, a nonlinearly Gaussian-like dependency of PL versus O/Si ratio with its maximum at O/Si of 1.24 is obtained. Maximized Si atomic density of 44.64 atom.% and nc-Si related PL of 25 count/nm is observed from SiO x with O/Si = 1.24 grown at N2O fluence of 50 sccm and N2 O/SiH4 flowing ratio as low as 5.5. The FTIR analysis clearly indicates that the strong absorption bands at 870 and 2250 cm−1 contributed by Si–H bonds suggests the hydrogen-passivated nc-Si could efficiently preserve the NIR PL response. Further reduction on O/Si composition ratio inevitably transfers the phase of host matrix from Si2O3 to SiO, which exhausts residual Si atoms and greatly decreases nc-Si density to degrade the PL response.
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Document Type: Research Article
Publication date: 2010-03-01
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