III–V/Silicon-on-Insulator Nanophotonic Cavities for Optical Network-on-Chip
We review some opto-electronic devices based on the III–V/SOI heterogeneous integration platform, including lasers, modulators, wavelength converters, and photo-detectors. All of them are critical components for future on-chip interconnect and optical network-on-chip. The footprints of such devices are kept small by employing micro-cavity based structures. We give an overview of the device performances. The advantages over the all-silicon based devices are also discussed.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Review Article
Publication date: 2010-03-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites