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III–V/Silicon-on-Insulator Nanophotonic Cavities for Optical Network-on-Chip

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We review some opto-electronic devices based on the III–V/SOI heterogeneous integration platform, including lasers, modulators, wavelength converters, and photo-detectors. All of them are critical components for future on-chip interconnect and optical network-on-chip. The footprints of such devices are kept small by employing micro-cavity based structures. We give an overview of the device performances. The advantages over the all-silicon based devices are also discussed.
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Document Type: Review Article

Publication date: 2010-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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