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Charging Effect of Aluminum Nitride Thin Films Containing Al Nanocrystals

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In this work, the Al-rich AlN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AlN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (V FB) of the MIS structure. The charge storage ability of the AlN thin films containing Al nanocrystals provides the possibility of memory applications. On the other hand, charge trapping in nc-Al reduces the current conduction because of the breaking of some tunneling paths due to Coulomb blockade effect and the current conduction evolves with a trend towards one-dimensional transport.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2010.1590

Publication date: January 1, 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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