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Si-Based Light-Emitting Structure Synthesized with Low-Energy Ion Implantation at a Low Dosage

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In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2 films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2 films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.
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Document Type: Research Article

Publication date: 01 January 2010

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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