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Structural and Chemical Characterization of Mn Doped GaN Nanowires by X-ray Absorption Spectroscopy

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Abstract:

We report on structural chemical state of doped Mn atoms in single crylstalline Mn doped GaN nanowires by X-ray absorption spectroscopy. Anomalous X-ray scattering and K-edge X-ray absorption fine structure measurement make it clear that Mn atoms substitute the Ga sites and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Mn L2,3-edges show that doped Mn has local magnetic moment and the electronic configuration of the doped Mn is mainly 3d5 component. The structural and chemical states of the doped Mn atoms imply that they ascribe to the observed ferromagnetism in these diluted magnetic semiconductor nanowires.

Keywords: ANOMALOUS X-RAY SCATTERING (AXS); DILUTED MAGNETIC SEMICONDUCTORS (DMSS); MN:GAN NANOWIRE; X-RAY ABSORPTION SPECTROSCOPY (XAS)

Document Type: Short Communication

DOI: https://doi.org/10.1166/jnn.2009.1368

Publication date: 2009-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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