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Synthesis and Characteristics of Cubic Silicon Carbide Nanospheres with Smooth Surfaces

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Large quantities of cubic silicon carbide (3C-SiC) nanospheres are synthesized on silicon wafer using zinc sulphide (ZnS) and activated carbon powder. The synthesized nanospheres have smooth surfaces and their diameters range from 20 to 430 nm. The growth of these nanospheres can be explained by a gas–solid model. ZnS powder plays a key role in the formation of activated Si and SiOx. Carburization of the activated Si and SiOx by CO gas leads to the formation of the 3C-SiC nanospheres. Special three-dimensional structure of the product is related to high concentrations of the reactants.


Document Type: Research Article


Publication date: November 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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