Fluoride-Decorated Oxides for Large Enhancement of Conductivity in Intrinsic Silicon Nanowires

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Abstract:

We demonstrate that by controlling surface state properties with a simple and rapid aqueous fluoride ion treatment, excellent electronic operation can be achieved on intrinsic Si nanowires without bulk doping, thereby taking advantage of the increase in surface-to-volume ratios in these diminutive structures. Forming the fluoride-decorated (F-decorated) oxide surface significantly increases the conductivity by more than one order of magnitude over the oxide surface and more than three orders of magnitude over the oxide-free H-terminated surface. This provides a methodology that might, in some instances, sidestep the difficult-to-control impurity doping of nanodevices.

Keywords: DOPING; FLUORIDE; OXIDE; SILICON NANOWIRES

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2009.1348

Publication date: November 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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