Photoconductive Properties of Selenium Nanowire Photodetectors
Abstract:Selenium nanowires with a diameter of about 70 nm and a growth direction along  were fabricated via a facile solution method. Photoconductive properties of Se wires were systematically characterized via photodetectors made of single Se nanowire. The photodetectors exhibited a high light on-off current ratio (Ilight/Idark) of 450, and a fast light response speed of millisecond rise/fall time with excellent stability and reproducibility. It was also observed that the response time strongly depend on the intensity of the illumination light: the rise time and fall time for a typical photodetector is 0.68/1.85, 0.53/1.70, 0.54/1.65, 0.51/1.59, and 0.49/1.58 ms for light intensity of 0.18, 0.26, 0.43, 0.96, and 1.89 mW/cm2, respectively, and the relationship between the light intensity and the photocurrent can be fitted by using a simple power law. The diameters of the nanowire were found to have a significant influence on the response speed with smaller Se nanowires showing higher response speed. Finally, the mechanisms of photoconduction and factors affecting the performance of the photodetectors were elucidated.
Document Type: Research Article
Publication date: 2009-11-01
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