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Silicon Nanocone Arrays Deposited by Sputtering

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Silicon nanostructures were produced by sputter deposition of silicon in mixtures of hydrogen and argon, on the surface of a silicon substrate with dispersed gold islands, at a substrate temperature of 450 °C. Continuous Si films were deposited when the hydrogen concentration in the working gas was less than 50%. Silicon nanocone arrays were grown when the hydrogen concentration exceeded 50%. The lateral size of silicon nanocones increased with the deposition time. However, the length of the silicon nanocones saturated as the deposition time was increased. Mechanisms of the growth of Si nanocones by sputter deposition in mixtures of hydrogen and argon were discussed.


Document Type: Research Article


Publication date: 2009-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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