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Formation and Characterization of Sub-Nanometer Scale cF8 Ge Precipitates in Si-Based Amorphous Matrix

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Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si–Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semi-conductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.
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Document Type: Research Article

Publication date: 2009-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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