Formation and Characterization of Sub-Nanometer Scale cF8 Ge Precipitates in Si-Based Amorphous Matrix
Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si–Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semi-conductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.
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Document Type: Research Article
Publication date: 2009-10-01
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