Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs)
The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were ∼3.2 and ∼7.4 nS, respectively. The field effect mobilities (eff for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm2/V·s, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.
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Document Type: Research Article
Publication date: 2009-10-01
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- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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