Nano-Engineering by Implanting Al₂O₃ Nano Particle as Sandwiched Scattering Centers in Between the La_0.5Pr_0.2Sr_0.3MnO₃ Thin Film Layers

Authors: Markna, J.H.; Vachhani, P.S.; Kuberkar, D.G.; Shah, N.A.; Misra, P.; Singh, B.N.; Kukreja, L.M.; Rana, D.S.

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 9, September 2009 , pp. 5687-5691(5)

Publisher: American Scientific Publishers

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Abstract:

We report the use of non-magnetic Al₂O₃ nano particles deposited between two ferromagnetic La_0.5Pr_0.2Sr_0.3MnO₃ (LPSMO) manganite layers with an aim to improve the electronic and magnetotransport properties of the layered supper lattice grown on single crystal STO(100) substrate using Pulsed Laser Deposition (PLD) technique. We studied the electronic-transport and magnetotransport properties of this system wherein Al₂O₃ particles are expected to act as insulating scattering centers between two ferromagnetic LPSMO layers. The scattering due to additional scattering centers (insulating Al₂O₃ nano particles) could be controlled by application of external field, resulting in high magnetoresistance (MR) ∼ 72% as compared to pristine LPSMO film (MR ∼ 51%) at temperature close to their T_IM values. In addition, incorporation of nanostructured Al₂O₃ barrier between the two ferromagnetic LPSMO layers results in a 2-3 fold increase in the values of temperature coefficient of resistance (TCR) and the field coefficient of resistance (FCR) as compared to pristine LPSMO film, suggesting the use of such nanoengineered manganite layered structure for better device application.

Keywords: MAGNETORESISTANCE; NANOSTRUCTURE; MANGANITES

Document Type: Short communication

DOI: http://dx.doi.org/10.1166/jnn.2009.1182

Publication date: 2009-09-01

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