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Growth of InN Nanocrystalline Films by Activated Reactive Evaporation

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InN films are grown on silicon and glass substrates by radio frequency (rf) activated reactive evaporation. High purity indium (99.99) is evaporated by resistive heating in the presence of nitrogen plasma. X-ray diffraction shows that the film deposited at low rf plasma powers (≤100 W) are indium rich and further increase in the rf power formation of InN take place. The average crystallite size was found varying from 8 nm to 20 nm as the power increases from 200 to 400 W. The diffraction pattern shows the polycrystalline nature of InN films. The band gap obtained from the transmission spectra show an increase in the band gap with the increase in rf power which can be attributed to variation of nitrogen: indium stoichiometry. The Raman spectra shows wurtzite nature of the film and the photoluminescence measurements show a weak peak around 1.81 eV for the film grown at 400 W. Plasma diagnostics has been carried out in order to understand the role of active species in the process. The large shift in the band gap is attributed to Moss-Burstein shift and presence of residual oxygen in the film.
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Document Type: Research Article

Publication date: 2009-09-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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